Conductivity modulated field effect transistor device.

摘要

A complementary-symmetry COMFET pair comprising an N-channel lateral COMFET and a P-channel lateral COMFET interconnected in parallel on the same chip. The device is formed in a layer of single-crystalline silicon of one conductivity type with one of the pair of COMFETs being formed directly in this layer. A well of opposite conductivity type is disposed in the layer and the other of the pair of COMFETs is disposed in the well. The two COMFETs are isolated from each other by a highly doped region which extends from the surface of the layer to the substrate and is of the same conductivity type as that of the substrate.