发明名称 |
Heterostructure transistor having a germanium layer on gallium arsenide and a method for manufacturing the same using molecular beam expitaxial growth. |
摘要 |
<p>A heterostructure bipolar transistor is formed by a process of steps of holding an N-type gallium arsenide body (3) used as an emitter region in a high vacuum of 10<-><9> torr to 10<-><1><3> torr at a first temperature of 400 DEG C to 1,000 DEG C where arsenic on a surface of the gallium arsenide body drift away, lowering the first temperature to a second temperature of 300 DEG C to 400 DEG C to start a molecular beam exitaxial growth of a germainum, and forming an N-type germanium layer (4) used as a collector region.</p> |
申请公布号 |
EP0334682(A2) |
申请公布日期 |
1989.09.27 |
申请号 |
EP19890303043 |
申请日期 |
1989.03.28 |
申请人 |
NEC CORPORATION |
发明人 |
KAWANAKA, MASAFUMI C/O NEC CORPORATION;KIMURA, TOORU C/O NEC CORPORATION;SONE, JUN'ICHI C/O NEC CORPORATION |
分类号 |
C30B23/08;C30B29/42;H01L21/20;H01L21/203;H01L21/331;H01L29/267;H01L29/73;H01L29/737 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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