| 摘要 |
PURPOSE:To obtain artificially a diamond crystal of the prescribed size by a simplified process in a short time by placing aggregates of diamond seed crystals on the surface of a substrate and applying the ordinary artificial diamond deposition treatment to the above. CONSTITUTION:Aggregates (preferably of 5-20mum average grain size) of diamond seed crystals formed of fine diamond seed crystals (preferably of <=1mum) are placed on the surface of a substrate, to which artificial diamond deposition treatment by the ordinary thermoelectron emitting method, high-frequency plasma method, or microwave method is applied. By this method, diamond is deposited and grown on the surface of the above diamond seed crystal aggregates and the aggregates of the diamond seed crystals are integrally crystallized. |
