发明名称 |
HIGH FREQUENCY AMPLIFIER CIRCUIT |
摘要 |
<p>A high frequency amplifier circuit based on an amplifying transistor, e.g. a dual-gate FET, having an A.G.C. voltage applied to a control terminal thereof to control the transistor DC operating current, has a diode connected between an input electrode of the transistor and a source of an input high frequency signal. All or part of the DC operating current of the transistor is passed through the diode as the operating current of the diode to thereby produce a high degree of attenuation by the diode when the transistor current level is small, so that reduced cross modulation interference is produced by the transistor when a high degree of gain reduction is executed by A.G.C. control.</p> |
申请公布号 |
CA1260081(A) |
申请公布日期 |
1989.09.26 |
申请号 |
CA19870547359 |
申请日期 |
1987.09.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
USUI, AKIRA;SAKASHITA, SEIJI;FUKUI, KIYOTAKE;NAGAI, HIROYUKI |
分类号 |
H03G1/04;H03G3/10;H03G3/30;(IPC1-7):H03G3/10 |
主分类号 |
H03G1/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|