| 摘要 |
<p>A field effect transistor comprises an InP substrate, an n-type semiconductor layer formed on the InP substrate, a GaInAs layer formed on the n-type semiconductor layer, no impurities being added to the GaInAs layer, an AlInAs layer formed on the GaInAs layer, a control electrode provided on the AlInAs layer, and a source electrode and a drain electrode provided at both the sides of the control electrode so as to make an ohmic contact to the GaInAs layer.</p> |
