| 摘要 |
A high energy density capacitor comprises a plurality of individual capacitor chips connected in parallel circuit to achieve a unit with improved series resistance and inductance and having the capability of delivering its stored energy in extremely short discharge times and providing high energy electrical pulses with extremely short rise times. The chips are fabricated of a ceramic material of the ABO3 perovskite type where A belongs to a divalent cationic species such as Mg, Ca, Ba, and Sr; B belongs to a quadrivalent species such as Ti, Sn, Pb, and Zr; and O represents oxygen. The perovskite material is preferably prepared from oxides, carbonates, oxalates and the like materials. A novel method of fabrication of the capacitive chips includes a first sintering step followed by hot isostatic pressing under predetermined times, temperatures, pressures and gaseous mixtures which are related to the particular material compositions being procesed. The resulting chips are assembled with suitable electrically conductive leads in a compact capacitor array which is encapsulated in an insulating medium for stability and permanence.
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