HIGH MOBILITY BIPOLAR TRANSISTOR USING PHONON LOCALIZATION EFFECT,申请号JP19880070610-传众专利搜索

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发明名称	HIGH MOBILITY BIPOLAR TRANSISTOR USING PHONON LOCALIZATION EFFECT
摘要
申请公布号	JPH01241866(A)	申请公布日期	1989.09.26
申请号	JP19880070610	申请日期	1988.03.23
申请人	NEC CORP	发明人	YAMADA TOSHISHIGE
分类号	H01L29/73;H01L21/331;H01L29/201;H01L29/72	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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