| 摘要 |
Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask (14) of photosensitive material having an opening (20) of a minimum size (A) dictated by the limits of lithography is formed on a substrate (10). Reduction in the image size is achieved by establishing sidewalls (24) to the interior vertical surfaces of the opening by depositing a conformal layer (22), followed by anisotropic etching. The dimension (C) of the new opening is reduced by the combined thickness of the two opposite insulator sidewalls. In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lithography, per se, is formed. |
