| 摘要 |
<p>PURPOSE:To detect the presence of a semiconductor element regardless of a positional deviation and a flaw, by outputting a high frequency signal to a semiconductor from a detection electrode to detect the presence thereof based on a change in the electrostatic capacity or impedance at a detection electrode part. CONSTITUTION:A coaxial cable 2 is connected to a high frequency transmitter 1 while a coaxial cable 3 is connected to a detector 4 and detection electrodes 2a and 3a are provided at the tips of both the coaxial cables 2 and 3 to be disposed sandwiching a semiconductor element 8 on a carrier stage 9. As the semiconductor element 8 carried on the carrier stage 9 passes, a change in the inter-electrode electrostatic capacity is received with a detector 4 in the passage between both the electrodes 2a and 3a to be further converted into a DC signal which is compared with an output of a reference voltage device 7 by a comparator 6 through an amplifier 5 to perform a binary coding thereof. This eliminates effect by scattered reflection and a flaw thereby achieving a higher measuring accuracy and a higher working efficiency.</p> |
