发明名称 |
Method for forming deposited films of group II-VI compounds |
摘要 |
A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.
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申请公布号 |
US4869931(A) |
申请公布日期 |
1989.09.26 |
申请号 |
US19890298219 |
申请日期 |
1989.01.17 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
HIROOKA, MASAAKI;KANAI, MASAHIRO;HANNA, JUN-ICHI;SHIMIZU, ISAMU |
分类号 |
H01L31/04;C23C16/30;C23C16/44;C23C16/452;H01L21/205;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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