| 摘要 |
PURPOSE:To execute a good die-bonding operation by a method wherein layers of Cr, Au and an AuSn alloy as metals for heat-welding are laminated one after another on an electrode of a semiconductor laser crystal and this crystal is die-bonded to a heat sink via the layers. CONSTITUTION:A resist pattern is formed on an electrode 104 of a semiconductor laser 105; Cr (100Angstrom ), Au (500Angstrom ) and an AuSn alloy (1mum) are vapor-deposited one after another on the electrode face 104. Then, the deposited film other than that on the electrode is removed by a lift-off process; a heat welded metal layer of a prescribed pattern is formed. A semiconductor laser crystal is die- bonded to a heat sink via the metal layers. By this setup, a good die-bonding operation can be executed. |
