| 摘要 |
PURPOSE:To form a uniform thin film on a substrate to be formed with a thin film having a large area by rotating a board holder in a plane parallel to the surface of the board by rotating means at the time of a thin film formation in each reaction chamber. CONSTITUTION:A plurality of reaction chambers 2a,... partitioned by partition valves 4a, 4b,... are provided, substrate holders 12 each holding a thin film forming substrate 11 are sequentially transferred to the chambers 2a,..., and thin films are formed in the chambers 2a,... by means of a plasma CVD method. In such a thin film formation, the holders 12 are rotated in a plane parallel to the surface of the board 11 by rotating means 16 at the time of thin film formation in the chambers 2a,.... For example, when a bet 14 is rotated by a driving roller 15 in a direction of an arrow A, the holder 12 is moved, since a guide rail 13 is stopped, in a direction of an arrow C while rotating in a direction of an arrow B in a plane parallel to the surface of the substrate 11. |
