| 摘要 |
PURPOSE:To make an electric wire hard to be fused, to improve electrostatic withstand voltage and to shorten an input signal propagation time by providing a junction diode formed by an impurity region connected to an input pad and a substrate and connected to power supply and a metal layer connected between the impurity layer of a junction diode and an inner gate. CONSTITUTION:Junction diodes D1, D2 and connected on the side of an input pad P0 and the resistance R2 to be formed of a conductive layer (for instance, polysilicon) is connected on the side of an inner gate Q2. The parasitic capacity of the resistance R2 is small, accordingly, a propagation time of an input signal to the inner gate becomes short. Further, since the static electricity of the big capacity flows to a power supply terminal Vcc or to the GND through the diode D1 or D2, no big current flows to the resistance R2, accordingly, the resistance R2 is hard to be fused. Thereby, the improvement of electrostatic withstand voltage and the reduction of the input signal propagation time can be attained without causing the fusing of a wiring or the like. |
