发明名称 |
APPARATUS FOR SEMICONDUCTOR MANUFACTURE |
摘要 |
An efficient producing method for semiconducting materials, comprising continous process involving continuous deposition of ntype and p-type silicon thin film being partly or wholly non crystalline and its shaping process produces p-doped silicon thin film with high acceptor density and p-n or p-i-n members made from this. This method has the advantages of mass production of electricity regulating members involving p-n, p-i-n members or solar cell. |
申请公布号 |
KR890003499(B1) |
申请公布日期 |
1989.09.22 |
申请号 |
KR19840004525 |
申请日期 |
1984.07.30 |
申请人 |
ENERGY CONVERSION DEVICES INC. |
发明人 |
OBSINSKI STANFORD;EESU MASATSGU;KANELLA BINSENT D. |
分类号 |
H01L31/04;C23C16/517;C23C16/54;H01L21/205;H01L27/142;H01L31/16;H01L31/18;(IPC1-7):H01L31/16 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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