发明名称 APPARATUS FOR SEMICONDUCTOR MANUFACTURE
摘要 An efficient producing method for semiconducting materials, comprising continous process involving continuous deposition of ntype and p-type silicon thin film being partly or wholly non crystalline and its shaping process produces p-doped silicon thin film with high acceptor density and p-n or p-i-n members made from this. This method has the advantages of mass production of electricity regulating members involving p-n, p-i-n members or solar cell.
申请公布号 KR890003499(B1) 申请公布日期 1989.09.22
申请号 KR19840004525 申请日期 1984.07.30
申请人 ENERGY CONVERSION DEVICES INC. 发明人 OBSINSKI STANFORD;EESU MASATSGU;KANELLA BINSENT D.
分类号 H01L31/04;C23C16/517;C23C16/54;H01L21/205;H01L27/142;H01L31/16;H01L31/18;(IPC1-7):H01L31/16 主分类号 H01L31/04
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