| 摘要 |
PURPOSE:To improve drain withstand voltage and simultaneously increase an ON current by providing an impurity diffusion layer and a leading-out electrode being conductive to the impurity diffusion layer directly under the insulating films provided at least under a part of a drain region and an offset region respectively and inside a silicon substrate. CONSTITUTION:An N-type diffusion layer 10 is provided directly under an underlying insulating film 2 near a drain region 6, a leading-out electrode 11 is connected to the N-type diffusion layer 10 through a contact window provided on the underlying insulating layer while being constituted so as to be able to impress positive potential from outside. In this way, by newly providing the N-type diffusion layer 10 on an offset gate type MOSFET of a prior art type SOI construction, the potential difference between the drain region and a silicon substrate can be held small. Accordingly, since the potential difference between the drain region and the silicon substrate can be weakened by imparting the positive potential to the N-type diffusion layer, drain withstand voltage can be raised. Further, the potential in the offset region can be raised so as to increase an ON current of the transistor. |
