| 摘要 |
<p>PURPOSE:To obtain a structure for generating no abnormal etch of a transparent conductive film without adding a process by making an opening area of an insulating thin film on the transparent conductive film larger than an opening area of an insulating thin film on a metallic thin film. CONSTITUTION:External connection use electrode terminals 25 for forming a main pad part 19 consisting of a transparent conductive film are all connected, and also, connected to the transparent conductive film for occupying a dummy area of a parge area of the periphery of a substrate, as well. Accordingly, on the transparent conductive film of such a large area, an opening part of an insulating film of an area being sufficiently larger than an auxiliary pad part 20 consisting of a metallic thin film can be formed. In such a way, at the time of opening the insulating films on the transparent conductive film and the metallic thin film by wet etching, a relative opening area ratio is raised by using the dummy area of the periphery, and it can be suppressed that an abnormal etch is generated in the opening area part on the transparent conductive film without adding a process substantially.</p> |
