| 摘要 |
PURPOSE:To contrive the microscopical formation of an element and an increase in the integration of the element by a method wherein the element is formed into a structure, wherein insulating films on the side surfaces of word lines and trenches for a capacitor are brought into contact with each other at least a part of each of their surfaces or side surfaces. CONSTITUTION:An oxide film 12 for interelement isolation is formed in a trench for isolation and a capacitor plate 17 is formed in trenches for a capacitor between the film 12 and insulating films 15 on the side surfaces of word lines 14. That is, an element is formed into a structure, wherein a trench capacitor and a trench isolation are provided and the gate insulating films 15 on the side surfaces of the word lines 14 and the trenches for a capacitor come into contact to each other at least parts of their surfaces or side surfaces. Thereby, an alignment margin becomes unnecessary and the element is microscopically formed by the amount of the margin and an increase in the integration of the element becomes possible. |
