| 摘要 |
PURPOSE:To relax a current concentration due to the effect of parasitic transistors and to contrive the improvement of the breakdown strength of a semiconductor device against breakdown by a method wherein a source electrode is formed in such a way that its point part reaches a P-type diffused region deeper than the thicknesses of N<+> diffused regions. CONSTITUTION:A source electrode 17 is formed in such a way that its point part 17a enters in a P-type diffused region 13 deeper than the thicknesses of N<+> diffused regions 14. Accordingly, an electron transfer to work as a base current of a parasitic transistor in the region 13, that is, a voltage drop due to the flow of holes is little and an electron flow to work as an emitter current of a parasitic transistor in the regions 14, which are source electrodes, is also reduced. Thereby, a current concentration due to the effect of the parasitic transistors is relaxed and the breakdown strength of a semiconductor device against the current concentration can be improved. |
