| 摘要 |
PURPOSE:To make it possible to easily forecast the degree of feeding stability of a semiconductor device in the state of relative irregularity of an element by a method wherein an exposing operation, with which a semiconductor integrated circuit which detects the effect of the relative irregularity of an element, is conducted. CONSTITUTION:The element pattern measurements same as the design center value of one chip component and the pattern data of an element pattern position are memorized in a pattern data storing part 11. These pattern data is picked out each time one-chip exposing operation is conducted, and the variation which is statistically random by a random number is added to the pattern data in accordance with the irregularity characteristics to be given to the pattern every time a pattern data is received by a statistical irregularity giving functional part 12. This pattern data having said irregularity is fed to an exposure control part 13, an exposing operation is conducted on a photomask or a semiconductor slice using an exposure part 14 which the exposure is being controlled. Accordingly, the receiving of a bulky data is unnecessary, and the exposure of statistical pattern data can be conducted easily. As a result, the degree of stability of supply of manufactured articles can be forecast easily. |
