发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided which comprises a semiconductor memory cell (1) for storing data, a storing data input/output line (D, D SEL) connected to the semiconductor memory cell (1) for performing an input/output operation with respect to the memory cell (1), a semiconductor switching element (T1) connected to the semiconductor memory cell (1) for altering the memory content of the semiconductor memory cell (1), and a memory contents altering data supply line (H1) connected to the switching element (T1) for supplying the memory contents altering data to permit switching to be performed by the semiconductor switching element (T1).
申请公布号 DE3479461(D1) 申请公布日期 1989.09.21
申请号 DE19843479461 申请日期 1984.10.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TOMINAGA, MASASHI C/O PATENT DIVISION;HAYASHI, HIROMASA C/O PATENT DIVISION
分类号 G11C11/41;G11C7/00;G11C7/10;G11C7/20;G11C11/419;(IPC1-7):G11C7/00;G11C11/40 主分类号 G11C11/41
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