发明名称 CHIPPING OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To prevent a crack from being produced or a chip from springing out by a method wherein, after at least one part of a rear damage layer of a wafer has been grounded and removed, the wafer is pasted on an adhesive sheet. CONSTITUTION:A rear damage layer of a wafer 1 whose wafer process has been completed is ground mechanically; after that, the wafer is pasted on an adhesive sheet 5. The rear of the wafer 1 is not only cleared of the brittle rear damage layer but also surfaced with a clean and regularly undulating ground face 8; the wafer is pasted closely to the adhesive sheet 5 via an adhe sive layer 3. Since a close contact property is good and the brittle rear damage layer does not exist, a shocking relative shift in both directions between a dicing saw 6 and the wafer 1 is suppressed even when a cut is produced with the dicing saw 6. Accordingly, a crack is not produced in the wafer 1; the wafer 1 does not spring out in chips.</p>
申请公布号 JPH01235350(A) 申请公布日期 1989.09.20
申请号 JP19880062713 申请日期 1988.03.16
申请人 FUJI ELECTRIC CO LTD 发明人 MARUYAMA SUMIAKI
分类号 H01L21/304;H01L21/301;H01L21/78 主分类号 H01L21/304
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