| 摘要 |
PURPOSE:To enable unrequired interconnection to be diffused and removed by heat treatment and to enable conduction test for semiconductor chip to be performed without use of solder connection bumps, by providing an interconnection between a plurality of electrodes or terminals arranged on a material to be diffused and on a semiconductor chip, and electrically connecting a pair of electrodes of solder bumps by means of the uppermost metallic layer of BLMs. CONSTITUTION:Underlying metal layers BLM 53 are formed respectively on a pair of electrode regions produced on interconnections 54 on the principal face of a semiconductor wafer 50. A conductive metal film 52 is formed on the top faces of the BLMs 53 of the electrodes and on the region between the BLMs 53, so that the electrodes are electrically connected with each other. Then, a pair of solder bumps 51 are formed independently from each other on the parts of the conductive metal film 52 corresponding to the electrodes. After a conduction test is carried out for the LSI chip on the semiconductor wafer 50, the structure is heat treated so that the conductive metal film 52 is diffused into the solder bumps 51 and the film 52 is cut off between the BLMS 53 of the electrodes. The solder bumps 51 are converted by the heat treatment into spherical electrodes 56 electrically independent of each other. The part of the conductive metal film 52 not diffused into the solder bumps 51 is separated from the electrodes 56. |
