| 摘要 |
<p>Process for formation of resist patterns in a single layer (2) resist process and a two layer (2,3) resist process comprising using a resist material prepared from a silicon-containing polymer and an addition agent which oan bond to said polymer upon an addition reaction when said resist material is exposed to a patterning radiation, and developping an exposed layer (12) of said resist material (2) with the dow flow etching. The resulting resist patterns can be advantageously used in the production of LSIs, VLSIs and other devices.</p> |
