| 摘要 |
<p>A pattern-forming resist material comprises a water-soluble polymeric material having at least one hydroxyl group in the molecular structure thereof and a photo-acid generator which, during exposure to radiation, does not cause cross-linking of the polymeric material, but release an acid upon reaction with the polymeric material. The resist material may be negative-working and is particularly suitable for deep ultraviolet exposure. On heating, the acid causes dewatering of the unsolubilizing polymeric material so that the resist material can be developed with water to form very fine resist patterns without swelling thereof.</p> |
