| 摘要 |
PURPOSE:To eliminate a defect of a crack to be produced in a semiconductor element and to enhance a yield of a wire bonding process by executing a wire bonding operation on an electrode and on a lead of the semiconductor element while a bonding load on the side of the electrode is made larger than a bonding load on the side of the lead of the semiconductor element. CONSTITUTION:A wire bonding operation on an electrode of a semiconductor element is achieved when a load to be applied to a bonding tool 111 is A+B and a displacement (an amount of a fall) of a bonding capillary 105 is l2. Then, the wire bonding operation on a lead is achieved when a load to be applied to the bonding tool 111 is A and the displacement (the amount of the fall) of the bonding capillary 105 is l1 which is smaller than l2. That is to say, when the electrode and the lead of the semiconductor element are to be wire- bonded, the load to be applied to the side of the electrode of the semiconductor element is made larger than that on the side of the lead in order to reduce the damage to be caused by ultrasonic waves which are applied during the bonding operation. A shape of a cam 115 in a bonding apparatus is formed so as to correspond to a bonding schedule. |
