| 摘要 |
PURPOSE:To form the patterns having high accuracy to both upper and lower layers by specifically treating a resist etching the upper layer when the layer to be etched of the two upper and lower layers is etched. CONSTITUTION:A poly Si layer is deposited onto a Si substrate, an oxide film is shaped to the surface, and a poly Si layr is further formed onto the oxide film. A positive resist is spin-coated onto the poly Si layer, and the resist pattern is shaped through baking, exposure, development, washing and post baking. A substance consisting of acidic phenol resin reacting and combining with hexamethyldisilazane is used as the positive resist. The pattern of the poly Si layer of the upper layer is shaped by the resist pattern. The hexamethyldisilazane is impregnated to the positive resist and the resist pattern is reinforced through baking. A positive resist pattern is formed onto the pattern, and the poly Si layer of the lower layer is etched by the positive resist pattern. |
