| 摘要 |
PURPOSE:To reduce an irregularity in an electrical characteristic by a method wherein semiconductor porcelains on which a diffusion agent has been coated in advance uniformly and dried are arranged regularly so as to come into contact with one another and they are filled so as to come into equal contact with an inner wall of a sheath and heat-treated in order to insulate a crystal grain boundary. CONSTITUTION:A diffusion agent paste of a prescribed amount is coated uniformly on semiconductor porcelains and dried; after that, the semiconductor porcelains 1 are arranged regularly and filled into a cylindrical sheath 2. The cylindrical sheaths 2 which have been filled are arranged in a sheath 3 for heat-treatment use in such a way that both ends are closed; they are heat-treated in the air at 1100 deg.C for 4 hours. By this heat treatment a diffusion agent is diffused to a crystal grain boundary of the semiconductor porcelains 1; this grain boundary is insulated. By this setup, it is possible to restrain the diffusion agent from being evaporated into the air, to reduce an irregularity in a residual amount of the diffusion agent after the heat treatment and to reduce an irregularity in an electrical characteristic. |
