| 摘要 |
<p>Described is a thin film transistor comprising on a substrate (101) a source electrode (103), a drain electrode (102), a semiconductor layer (104) contacting the source and drain electrodes, a gate insulating layer (105) and a gate electrode (106), wherein said source and drain electrodes (103, 102) are formed as parallel elongated strips extending in a first direction, said semiconductor layer (104) and said gate electrode (106) are formed as elongated strips extending in a second direction substantially perpendicular to said frist direction, and said gate electrode (106) completely covering said semiconductor layer (104) through the gate insulating film (105). With this arrangement any shift of the gate electrode (106) with respect to source and drain electrodes (103, 102), which may occur during manufacturing, does not influence the parasitic capacitances between gate and source and gate and drain of the transistor. This ensures uniform transistor characteristics where a plurality of such thin film transistors are employed as for instance with an active matrix liquid crystal display device.</p> |
