发明名称 |
THIN FILM SILICON SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THEREOF |
摘要 |
A thin film silicon semiconductor device provided on a substrate (12) according to the present invention comprises a thin polycrystalline silicon film (14) having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm<2>/V.s or higher. |
申请公布号 |
EP0301463(A3) |
申请公布日期 |
1989.09.20 |
申请号 |
EP19880111984 |
申请日期 |
1988.07.25 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
SERIKAWA, TADASHI;SHIRAI, SEIICHI;OKAMOTO, AKIO;SUYAMA, SHIROU |
分类号 |
H01L21/20;H01L21/203;H01L21/205;H01L21/321;H01L21/324;H01L21/84;H01L27/12;H01L29/04;H01L29/78;H01L29/786;(IPC1-7):H01L21/20;H01L21/263;H01L21/268 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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