| 摘要 |
PURPOSE:To obtain the title method suitable for developing a resist with the downflow of a plasma of gas contg. oxygen as a component by exposing and heating a mixed resist composed of a polymer contg. hydroxyl group and a complementary agent capable of producing an acid by exposure. CONSTITUTION:The mixed resist composed of the polymer contg. the hydroxyl group and the complementary agent capable of producing the acid by the exposure is exposed by a light, a X ray or an electron beam to proceed the reaction. When obtd. mixed resist is heated after exposing it, the reaction further proceeds by a catalytic action of the produced acid. The releasing reaction of the hydroxyl group contd. in the polymer occurs by the action of an acid catalyst with the result that the etching speed of the polymer (the exposed part) is remarkably later than that of the unexposed part of the polymer. Accordingly, the unexposed part of the polymer is removed by etching it with the downflow of a gas plasma of O2/CF4, while the exposed part of the polymer becomes somewhat thin, but remains as a negative pattern. Thus, the resist suitable for dry-developing with the downflow of an oxygen-contg. gas plasma and the pattern forming method using the resist are obtd. |
