| 摘要 |
A semiconductor laser device with a stripe-channeled substrate and an active layer for laser oscillation disposed over the substrate comprising an optical waveguide; a striped mesa that is formed by the removal of the portions corresponding to the outside of said optical waveguide; and a multi-layered crystal that is grown into said removed portions, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp-n- or pn-n- reverse bias junction, and a method for the production thereof comprising epitaxially growing a multi-layered crystal containing the active layer on a grown crystal that includes the stripe-channeled substrate; forming a striped mesa on the portion corresponding to said striped channel by the removal of the portions at both sides of said striped channel; and epitaxially growing a multi-layered crystal outside of said striped mesa, said multi-layered crystal including a plurality of burying layers and containing a pin-, pp-n- or pn-n- reverse bias junction.
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