发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To eliminate cracks in an insulating film by a method wherein a bump covering an elastic insulator layer and an edge part of a metal pad for external extraction electrode is formed and a lead for external extraction is pressure-bonded onto the bump. CONSTITUTION:An elastic insulator layer 5 is formed in a central region on a metal pad 4 in an opening 3 formed in an insulating film 2 formed on the metal pad for external extraction electrode use formed on a semiconductor substrate 1. A bump 6 is formed in such a way that it covers the insulator layer 5 and edge parts of the pad 4. A lead 7 for external extraction use is pressure-bonded onto the bump 6. A pressure-bonding force during pressure- bonding the lead 7 onto the bump 6 is transmitted to the insulator layer 5; its compressive force is absorbed while the insulator layer 5 is elastic-deformed. By this setup, no crack is produced in the insulating film 2.</p>
申请公布号 JPH01233741(A) 申请公布日期 1989.09.19
申请号 JP19880059476 申请日期 1988.03.15
申请人 FUJITSU LTD 发明人 UMEZUKI AIICHIRO
分类号 H01L21/60;H01L21/321 主分类号 H01L21/60
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