| 摘要 |
A semiconductor memory device provided with an improved word line drive circuit is disclosed. The memory device comprises a pair of decoding units, a plurality of word lines, a plurality of N-channel transistors coupled between first ends of the word lines and the output terminal of one of the pair of decoding unit, and a plurality of P-channel transistors coupled between second, opposite ends of the word lines and the output terminal of the other of the pair of decoding units.
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