发明名称 SCHOTIKY BARRIER PIODE
摘要 The diode has an electrode for high speed operation and for mechanical stress reduction caused by ultrasonic welding. A protecting layer (3) is covered on the first conduction type layer (2) except some area. A second conduction type layer (4) is formed by selective diffusion in the diffusion layer. A metal layer (6) having contact resistance is formed on the second conduction type layer (4). A metal layer (7) forming a schottky barrier and deposited from surface of the second conduction type layer (4) to the exposed surface of the first conduction type layer (2) is formed.
申请公布号 KR890003380(B1) 申请公布日期 1989.09.19
申请号 KR19840002627 申请日期 1984.05.15
申请人 KANSAI NIPPON ELECTRIC CO.,LTD. 发明人 ESHIKURA, OSAMU
分类号 H01L29/47;H01L29/872;(IPC1-7):H01L29/38 主分类号 H01L29/47
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