发明名称 |
SCHOTIKY BARRIER PIODE |
摘要 |
The diode has an electrode for high speed operation and for mechanical stress reduction caused by ultrasonic welding. A protecting layer (3) is covered on the first conduction type layer (2) except some area. A second conduction type layer (4) is formed by selective diffusion in the diffusion layer. A metal layer (6) having contact resistance is formed on the second conduction type layer (4). A metal layer (7) forming a schottky barrier and deposited from surface of the second conduction type layer (4) to the exposed surface of the first conduction type layer (2) is formed.
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申请公布号 |
KR890003380(B1) |
申请公布日期 |
1989.09.19 |
申请号 |
KR19840002627 |
申请日期 |
1984.05.15 |
申请人 |
KANSAI NIPPON ELECTRIC CO.,LTD. |
发明人 |
ESHIKURA, OSAMU |
分类号 |
H01L29/47;H01L29/872;(IPC1-7):H01L29/38 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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