| 摘要 |
A process for producing a dielectric layer on a semiconductor layer (1) comprises the steps of: forming a layer of oxide (2 min ) of an element selected from the group of tantalum, titanium, niobium, hafnium, yttrium, zirconium, and vanadium on the surface of said semi-conductor layer; and heating said semiconductor layer having said oxide layer thereon in an oxidizing atmosphere, thereby thermally oxidizing the material constituting said semiconductor layer so as to form an insulating layer (3) which comprises oxide of said semiconductor material at the interface between said semiconductor layer and said oxide layer. |
