| 摘要 |
PURPOSE:To reduce off-current and to improve characteristics by providing a side wall consisting of an insulating material on a side face of a silicon thin film and by making a region covered with a side wall of a drain region an off-set region whereto impurity is not introduced. CONSTITUTION:An insulation film 3 is provided covering a surface of a gate electrode 2. A silicon thin film 4 is provided in an area opposite to the upper and side surfaces of the gate electrode 2 on the insulation film 3 extending to an insulation film 1. A side wall 5 consisting of silicon oxide, etc., is provided to a side of the silicon thin film 4 opposite to the side of the gate electrode 2. Therefore, boron, etc., is introduced into a region which is not covered with the side wall 5 of the silicon thin film 4. Among the impurity diffusion regions thus formed, a region on the gate electrode 2 is a source electrode 6, a region in contact with the insulation film 1 is a drain region 7, and a region on the opposite side of the gate electrode 2 of the silicon thin film 4 with the secondary insulation film 3 therebetween is a channel region 8. A region which is covered with the side wall 5 of the silicon thin film 4 and is in contact with a primary insulation film 1 is an off-set region 9 of the gate electrode 2 and the drain region 7.
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