| 摘要 |
<p>PURPOSE:To obtain the title material comprising a photosensitive poly(amide) imide, which can be directly subjected to fine processing by light and can form a heat-resistant pattern on a semiconductor element or the like, by incorporating a specified polymer obtained by reacting a tetracarboxylic acid dianhydride with a silylated diamine compound in an organic solvent such as tetrahydrofuran. CONSTITUTION:A starting material is obtained from a tetracarboxylic acid dianhydride formula I (wherein R2 is a tetravalent organic group having at least one aromatic ring) and a silylated diamine compound of formula II wherein R1 is a bivalent organic group, R3 is photosensitive group containing at least one Si atom, preferably, an organosilane group of formula III (wherein R4 is H, Cl or a monovalent organic group, R5 is a photosensitive monovalent organic group, and m is 1-3). This starting material is dissolved in an organic solvent of a b.p. <=100 deg.C (e.g., tetrahydrofuran) in a concentration of 1-30wt.% and reacted at -20-100 deg.C to obtain a polymer having recurring units of a structure of formula IV (wherein n is an arbitrary positive integer). This polymer is dissolved in an organic solvent to obtain a solution of a concentration of 5-30wt.%.</p> |
