| 摘要 |
PURPOSE:To simplify a circuit configuration and to reduce its power loss by incorporating a diode between the source and the drain of a field effect transistor. CONSTITUTION:Insulated gate field effect transistors FETs 10a, 10b, 10c, 10d are connected in series with first, second, third and fourth windings 2a-2d, respectively. The FETs 10a-10d, having a P-type region 11, N<+> type regions 12, 13 and a P<+> type region 14, are substrate internal connection type N-channel FETs in each of which a drain electrode D is connected to the region 12 and a source electrode S is connected to the regions 13, 14. |
