发明名称 |
A METHOD OF ELECTRON BEAM EXPOSURE |
摘要 |
A method for improving the throughput of precision pattern generation using intermittent shots of an electron beam. The shot applied to the periphery of the region to be occupied by the pattern occurs after a relatively long blanking time starting after the directly preceding shot, while the shot applied to the inner portion of the region occurs after a relatively short blanking time starting after the directly preceding shot. |
申请公布号 |
DE3572254(D1) |
申请公布日期 |
1989.09.14 |
申请号 |
DE19853572254 |
申请日期 |
1985.02.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
HAMAGUCHI, SHIN-ICHI C/O FUJITSU LIMITED |
分类号 |
H01L21/26;G03F7/20;H01J37/302;H01J37/317;H01L21/027;H01L21/30 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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