发明名称 PNPN SWITCH DEVICE
摘要 <p>A PNPN switch device with a circuit for preventing an error due to a surge voltage. The circuit comprises two capacitors. The first capacitor is formed in a P-type gate region. The second capacitor of a capacitance of an insulation layer sandwiched between a MOS gate electrode and a capacitor electrode is provided outside the P-type gate region.</p>
申请公布号 EP0164106(B1) 申请公布日期 1989.09.13
申请号 EP19850106927 申请日期 1985.06.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MOTOJIMA, HIDEAKI;TAKAYAMA, HIROKI;OHURA, JUN-ICHI
分类号 H01L23/522;H01L27/02;H01L27/06;H01L29/74;H01L29/747;H01L31/111 主分类号 H01L23/522
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