Semiconductor devices with silicon-on-insulator structures.

摘要

For fabricating a CMOS SOI structure on a silicon substrate (1) having a (110) plane an insulating SiO2 layer (2) is formed; an opening (2 min ) is formed in the SiO2 layer to expose a part of the substrate (1); a polycrystalline or amorphous silicon layer (3) is deposited on the SiO2 (2) and in the opening (2 min ); the deposited silicon layer (3) is divided into islands (3A, 3B) so that a first island (3A) includes the opening (2 min ) whilst a second island (3B) does not; a laser light (LB) is irradiated onto the islands (3A, 3B) so as to melt the islands; when the laser light irradiation is discontinued the melted islands are recrystallized so that the first island (3AR) forms a (110) plane whilst the second island (3BR) forms a (100) plane; and on the first island (3AR) a p-channel MOS FET is fabricated whilst on the second island (3BR) an n-channel MOS FET is fabricated.