| 摘要 |
PURPOSE:To enhance the degree of integration of the semiconductor device, while to enable to attain multilayer wiring by a method wherein an MISFET provided in a poly-silicon layer on an insulating film is utilized as a load element. CONSTITUTION:The thin insulating film (gate insulating film) 22a and the thick insulating film (field insulating film) 22b are formed on the surface of a semiconductor substrate, and the n type poly-silicon layer is formed thereon. Then after an MIS element channel diffusion mask 30 is formed to prevent introduction of impurities into a channel part 23, p type impurities are introduced into the poly-silicon layer and the semiconductor substrate according to diffusion, etc. Accordingly the source 13, the drain 14 and the gate 17 of the MISFET Q3 are formed, while the load MISFET Q2 making p type poly-silicon layers 17, 18 as the source and drain, and an Al electrode 20 as the gate is formed. Accordingly, the load element Q2 having the high resistance value can be formed easily. |
