| 摘要 |
PURPOSE:To prevent electrostatic breakdown of integrated circuit elements so as to make it fully exhibit essential functions by connecting plural diodes in serial between the terminal of an integrated circuit and a power source voltage line or an earth line. CONSTITUTION:N-type epitaxial layers 13 and 131, P type base diffusion layers 14 and 141, and N-type emitter diffusion layers 15 and 151 which are put between isolation layers 12 are formed in order at a part of a P type substraight board 11 so as to form two diodes of PN type junction out of the diffusion layers 14 and 15 and the diffusion layers 141 and 151. The layer 15 is connected to an Al deposition layer 17 which becomes an input terminal of an integrated circuit through a contact window 16. Also, the layers 151 and 14 are connected by an Al deposition layer 171 and the diffusion layer 141 is connected to an Al deposition layer 172 connected with an earth point so as to form a circuit where two diodes are connected in series. These two diodes 21 and 22 are connected in series between the terminal 24 of a semiconductor integrated circuit and the earth line 25. |
