| 摘要 |
<p>PURPOSE:To enable a trimming code to be selected at a low voltage and with a single power supply by a method wherein a thin film resistor is connected between an earth potential and the source of an N-channel MOS transistor and the drain and the gate of the N-channel MOS transistor are respectively connected to the highest potentials. CONSTITUTION:One end of a thin film resistor is connected to the lowest potential Vss, the other end of the resistor is connected to a source of an N-channel MOS transistor 1 and a drain and a gate of the transistor 1 are respectively connected to the highest potentials Vcc. Moreover, the nodal point between one end of the thin film resistor and the source of the transistor 1 is connected to an input of a complementary inverter constituted of an N-channel MOS transistor 2 and a P-channel MOS transistor 1 having a threshold voltage of the absolute value larger than that of the threshold voltage of the transistor 1. A trimming code is set by the output of the inverter 1. Thereby, a selection of the trimming code becomes possible in a low voltage and by a single power supply.</p> |
