发明名称 Process for producing a semiconductor laser mirror by ionic machining
摘要 A semiconductor (10) is subject to ionic etching (14) through a mask, whereof one side determines the location of the mirror. This mask is constituted by a crystalline layer (12), whereof the side (16) is a crystallographic plane.
申请公布号 US4865684(A) 申请公布日期 1989.09.12
申请号 US19880158071 申请日期 1988.02.12
申请人 BOUADMA, NOUREDDINE 发明人 BOUADMA, NOUREDDINE
分类号 H01L21/302;H01S5/00;H01S5/026;H01S5/028 主分类号 H01L21/302
代理机构 代理人
主权项
地址