发明名称 POSITIVE COEFFICIENT THERMISTOR MATERIAL AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain the title thermistor material having a high resistance temperature coefficient alpha, a wide variation range of resistance and a high breakdown voltage characteristics by a method wherein the element brought into the state of semiconductivity such as barium titanate, niobium or a rare-earth element and the like, and manganese metasilicate are contained in the thermistor material. CONSTITUTION:The element brought into the state of semiconductivity, such as barium titanate, niobium or rare-earth element and the like, and manganese metasilicate, are contained, and barium carbonate (BaCO2), titanium oxide (TiO2), yttrium oxide (Y2O3), manganese metasilicate (MnSiO3) and silicon dioxide (SiO2) are weighted to satisfy the chemical formula of BaTiO3+0.013 SiO2+0.0007MnSiO2+0.002Y2O3, and a sintering operation is conducted. When ceramics are sintered, as the added silicon (Si) is turned into a glass phase and segregated to a crystal grain boundary layer, the manganese (Mn) added as a compound with silicon is segregated. As a result, the positive coefficient thermistor material having a high resistance temperature coefficient alpha and a variation range of resistance can be obtained.
申请公布号 JPH01228102(A) 申请公布日期 1989.09.12
申请号 JP19880053719 申请日期 1988.03.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TSUDA YASUO
分类号 H01C7/02 主分类号 H01C7/02
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