| 摘要 |
PURPOSE:To simplify the circuit constitution and to reduce the power loss of an integrated circuit by inserting a parallel circuit consisting of a resistance and a diode to the gate of each of P-channel and N-channel MOSFETs in the semiconductor integrated circuit provided with P-channel and N-channel MOSFETs having the CMOS circuit constitution. CONSTITUTION:When an input signal Vin goes to the high level, a MOSFET P2 is turned off and a MOSFET N2 is turned on. Next, a MOSFET N1 is turned and a MOSFET P1 is turned on, and as the result, an output signal Vout goes to the high level. Then, the MOSFET N1 is turned off and the MOSFET P1 is turned on, and a resistance R1 or R2 is inserted to one time constant circuit and a diode D2 or D1 is inserted to the other at this moment, and therefore, the timing of turning-on of the MOSFET P1 and that of turning- off of the MOSFET N1 are shifted from each other and they are not simultaneously turned on. MOSFETs P1 and N1 are not simultaneously turned on even at the moment when the MOSFET P1 is turned off and the MOSFET N1 is turned on. Thus, the cross current is eliminated or considerably reduced. |
