发明名称 |
Heterojunction field effect transistor having gate threshold voltage capability |
摘要 |
A field effect transistor comprising a semiconductor channel region; an undoped semiconductor material region adjacent the channel region; a second semiconductor material region separated from the channel region; and a region of semiconductor material adjacent the second region and having a narrower band gap than the band gap of the region adjacent the channel region; and ohmic contact means to the region having the narrower band gap.
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申请公布号 |
US4866491(A) |
申请公布日期 |
1989.09.12 |
申请号 |
US19890294979 |
申请日期 |
1989.01.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SOLOMON, PAUL M.;THEIS, THOMAS N. |
分类号 |
H01L29/43;H01L29/778 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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