发明名称 PHOTOVOLTAIC DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain a photovoltaic device excellent in a photoelectric conversion efficiency by a method wherein P-phenilene is made to be contained in a photoconductive layer which is a straight-chain compound high molecular layer provided with group VIb elements at para-positions, where the group VIb elements contain at least one element selected from S, Se, and Te and furthermore contain Oatom. CONSTITUTION:A first electrode 2 and a photoconductive layer 3 which contains a high molecular layer are provided on a support 1, and a second electrode is provided on the photoconductive layer 3. And, P-phenilene made to be contained in the photoconductive layer 3, which is a straight-chain compound high molecular layer provided with group VIb elements at para-positions, where the group VIb elements contain at least one element selected from S, Se, and Te and furthermore contain Oatom is made to be contained through a heat treatment in an atmosphere which contains oxygen. By these processes, a photoelectric conversion efficiency can be improved and a short-circuit current can be increased.
申请公布号 JPH01228179(A) 申请公布日期 1989.09.12
申请号 JP19880055170 申请日期 1988.03.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANAKA EIICHIRO;TAKIMOTO AKIO;AKIYAMA KOJI;WATANABE MASANORI
分类号 H01L31/04;H01L51/00;H01L51/30;H01L51/42 主分类号 H01L31/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利