| 摘要 |
PURPOSE:To enable a silicon wafer which is of high precision and has little curvature, to be separated by cutting and at the same time, lengthen the life of a cutting edge, by jetting in pressurization the grinding liquid of alkalinity at least toward the starting point of cutting in. CONSTITUTION:When a silicon single crystallization stick 1 is processed in milling by using an inner perimeter type cutting edge 2, the liquid of grinding is jetted in pressurization from a nozzle 6 toward its cutting in starting point 4. In this instance, if the liquid of grinding is of alkalinity, a mechanical energy inside the silicon single crystallization stick 1 is changed to heat in the process of cutting, and the surface of silicon powder generated in chemically eroded by means of alkali and gas is generated, and it becomes rare that being choked up occurs through the attachment of cutting powder to a cutting edge grindstone portion 3. As a result, the bend of the cutting edge 2 is prevented, and the occurrence of the curvature of a wafer is decreased, and at the same time, the use frequency of the cutting edge 2 is increased. |
